| PART |
Description |
Maker |
| CAT93C5711PI-45TE13 CAT93C5621PI-45TE13 CAT93C4621 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
BCD Semiconductor Manufacturing, Ltd.
Atmel, Corp.
Amphenol, Corp.
|
| AT27BV512-15TI AT27BV512-15JI AT27BV512-90RC AT27B |
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel
|
| AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| AT24C64A AT24C64A-10PI-1.8 AT24C64A-10PI-2.7 AT24C |
32/64K, 2-Wire Bus Serial EEPROM w/Cascadable Features, Full Write Protect and high speed at medium voltage.
2-Wire Serial EEPROM 32K (4096 x 8) 64K (8192 x 8)
|
ATMEL[ATMEL Corporation]
|
| 28LV64A-30I_P 28LV64A 28LV64A-20/SO 28LV64A-20/TS |
SENSOR, QUICK DISCONNECT WITH EUROFAST 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM(低压,64K CMOS 并行EEPROM) 64K的（8K的8）低电压的CMOS EEPROM的（低压4K的位，并行的CMOS EEPROM的）
Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit)
64K x 16 Static RAM
Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
SRAM
INTEGRATED DEVICE TECHNOLOGY INC
|
| CY7C187 CY7C187-15PC CY7C187-15VC CY7C187-20PC CY7 |
64K x 1 Static RAM 64K X 1 STANDARD SRAM, 15 ns, PDIP22
64K x 1 Static RAM 64K的1静态RAM
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| AT29BV010A |
128K x 8 Single 2.7-volt Battery-Voltage Flash Memory(128K x 8单电.7V Battery-Voltage技术闪速存储器) 128K的8.7伏电池电压快闪记忆体28K的8单电源为2.7V电池电压技术闪速存储器
|
Atmel, Corp.
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
